Toshiba Announces Next-Generation Superjunction Technology for Power MOSFETs
Poster: SySAdmin
Posted on May 9, 2012 at 1:07:01 PM
Toshiba Announces Next-Generation Superjunction Technology for Power MOSFETs
New Process in Latest 600V MOSFETs Delivers Ultra-Low RDS((ON)), Reduced Switching Losses and Fewer Incidents of 'Ringing'
IRVINE, Calif., May 9, 2012 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced its DTMOS-IV process, a new-generation of superjunction (SJ) technology for power MOSFETs. Products based on the DTMOS-IV technology will make ideal switching devices in switch mode power supplies, lighting ballasts and other power applications that demand a combination of high-speed operation, high-efficiency and low EMI noise.
SJ MOSFETs offer ultra-low on resistance without power loss penalties. As a result, Toshiba's new DTMOS-IV process, which is being deployed in the company's latest family of high-speed, high-efficiency 600V power MOSFETs, offers on resistance ratings that are up to 30 percent lower than third-generation DTMOS products for the same die size. The benefit is that designers can now choose a 600V MOSFET in a TO-220SIS package with an RDS((ON)) of just 0.065 Omega, or a similar device in a TO-3P(N) package with an RDS(ON) down to 0.04 Omega.
In addition to driving down on resistance, DTMOS-IV has also allowed Toshiba to minimize MOSFET output capacitance (C(oss)) for optimized Switching Power Supply operation at light load. Furthermore, an optimized gate-drain capacitance (C(gd)) delivers improved dv/dt switching control, while an optimized RDS((ON))*Q(g) figure of merit supports high-efficiency switching. Finally, by supporting lower dv/dt ratings, DTMOS-IV also reduces EMI noise in high-speed switching circuitry.
The DTMOS-IV technology uses a deep-trench process that results in a narrowing of the lateral SJ pitch, leading to optimized overall performance.
Toshiba's first MOSFETs based on the DTMOS-IV process are available now in an expanded line-up that includes: DPAK, IPAK, D2PAK, I2PAK, TO-220, TO-220SIS, TO-247, TO-3P(N), and TO-3P(L) packages.
Toshiba's Discrete Products
Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers LMOS logic, CMOS logic, photocouplers, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About Toshiba Corp. and TAEC
About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, MP3 players, cameras, medical devices, automotive electronics, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2011 Worldwide Semiconductor Revenue, March, 2012). Toshiba Corporation was founded in 1875 and today has over 490 subsidiaries and affiliates, with 203,000 employees worldwide and annual sales of $77 billion. Visit Toshiba's web site at http://www.toshiba.co.jp/index.htm
© 2011 Toshiba America Electronic Components, Inc. All rights reserved.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.
Editor's Note: Images available for download from: http://www.toshiba.com/taec/news/press_releases/2012/powr_12_633.jsp
MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com
SOURCE Toshiba America Electronic Components, Inc.
Toshiba America Electronic Components, Inc.
CONTACT: Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
Web Site: http://www.toshiba.com/taec
New Process in Latest 600V MOSFETs Delivers Ultra-Low RDS((ON)), Reduced Switching Losses and Fewer Incidents of 'Ringing'
IRVINE, Calif., May 9, 2012 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced its DTMOS-IV process, a new-generation of superjunction (SJ) technology for power MOSFETs. Products based on the DTMOS-IV technology will make ideal switching devices in switch mode power supplies, lighting ballasts and other power applications that demand a combination of high-speed operation, high-efficiency and low EMI noise.
SJ MOSFETs offer ultra-low on resistance without power loss penalties. As a result, Toshiba's new DTMOS-IV process, which is being deployed in the company's latest family of high-speed, high-efficiency 600V power MOSFETs, offers on resistance ratings that are up to 30 percent lower than third-generation DTMOS products for the same die size. The benefit is that designers can now choose a 600V MOSFET in a TO-220SIS package with an RDS((ON)) of just 0.065 Omega, or a similar device in a TO-3P(N) package with an RDS(ON) down to 0.04 Omega.
In addition to driving down on resistance, DTMOS-IV has also allowed Toshiba to minimize MOSFET output capacitance (C(oss)) for optimized Switching Power Supply operation at light load. Furthermore, an optimized gate-drain capacitance (C(gd)) delivers improved dv/dt switching control, while an optimized RDS((ON))*Q(g) figure of merit supports high-efficiency switching. Finally, by supporting lower dv/dt ratings, DTMOS-IV also reduces EMI noise in high-speed switching circuitry.
The DTMOS-IV technology uses a deep-trench process that results in a narrowing of the lateral SJ pitch, leading to optimized overall performance.
Toshiba's first MOSFETs based on the DTMOS-IV process are available now in an expanded line-up that includes: DPAK, IPAK, D2PAK, I2PAK, TO-220, TO-220SIS, TO-247, TO-3P(N), and TO-3P(L) packages.
Toshiba's Discrete Products
Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers LMOS logic, CMOS logic, photocouplers, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About Toshiba Corp. and TAEC
About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, MP3 players, cameras, medical devices, automotive electronics, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2011 Worldwide Semiconductor Revenue, March, 2012). Toshiba Corporation was founded in 1875 and today has over 490 subsidiaries and affiliates, with 203,000 employees worldwide and annual sales of $77 billion. Visit Toshiba's web site at http://www.toshiba.co.jp/index.htm
© 2011 Toshiba America Electronic Components, Inc. All rights reserved.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.
Editor's Note: Images available for download from: http://www.toshiba.com/taec/news/press_releases/2012/powr_12_633.jsp
MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com
SOURCE Toshiba America Electronic Components, Inc.
Toshiba America Electronic Components, Inc.
CONTACT: Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
Web Site: http://www.toshiba.com/taec