Toshiba Introduces Low RDS(ON) P-ch MOSFETs for Mobile Devices

Toshiba Introduces Low RDS(ON) P-ch MOSFETs for Mobile Devices

New MOSFETs Support High Currents, Make Ideal Charging Switch for Smartphones

IRVINE, Calif., May 23, 2013 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has announced the addition of three new high current P-ch MOSFETs: the SSM6J505NU, SSM6J501NU and SSM6J503NU. Supporting high currents for high power dissipation packages, the new MOSFETs make ideal charging switches for smartphones and other mobile devices with high current charging circuits.

As the battery capacity of smartphones and other mobile devices increases, the charging current increases as well. Toshiba used the latest UMOS VI process to design the SSM6J505NU, SSM6J501NU and SSM6J503NU in a small 2.0mm × 2.0mm × 0.75mm (UDFN6B) package that achieves low ON-resistance and allows large currents.

                                                                                                                                                                                             
                Part number                      Feature              VDSS            VGSS             ID(A)                RDS(ON) max. (mO)          CISS (pF)
                                                                                                                                                                                             
                                                                       (V)            (V)                                                                                  Package
    ---                                                                ---            ---                                                                                  -------
                                                                                                                   
                VGS = -1.2V                    VGS = -1.5V        VGS = -1.8V     VGS = -2.5V       VGS = -4.5V
                -----------                    -----------        -----------     -----------       -----------
                                                                                                                                                                                         
    SSM6J505NU                                 Low RDS(ON)                -12               +/-6    -12      61       30      21       16      12       2700            UDFN6B
    ----------                                 ----------                 ---               ----    ---     ---      ---     ---      ---     ---       ----            ------
                                                                                                                                                                                         
    SSM6J501NU                              Low RDS(ON), high
                                                 voltage                  -20               +/-8    -10       -       43    26.5       19    15.3       2600            UDFN6B
    ----------                                -----------------           ---               ----    ---     ---      ---    ----      ---    ----       ----            ------
                                                                                                                                                                                         
    SSM6J503NU                                high voltage                -20               +/-8     -6       -     89.6    57.9     41.7    32.4        840            UDFN6B
    ----------                                ------------                ---               ----    ---     ---     ----    ----     ----    ----        ---            ------

"As additional functions are added to mobile devices and more demands are made on their batteries, boosting charge density and improving the user experience by reducing charging time become top priorities," noted Talayeh Saderi, senior business development engineer for TAEC. "Engineers designing smartphones, laptops, DSCs, and other portable devices will find thatour new MOSFETs help them achieve these outcomes - and offer the best performance in their class."

Pricing and Availability

Toshiba's new low RDS(ON) MOSFETs are available now. Budgetary pricing begins at $0.13 for sampling quantities.

*About Toshiba Corp. and TAEC

About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs.  Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fifth largest semiconductor manufacturer (Gartner, 2012 Worldwide Semiconductor Revenue, April, 2013). Toshiba Corporation was founded in 1875 and today has over 554 subsidiaries and affiliates, with 210,000 employees worldwide. Visit Toshiba's web site at http://www.toshiba.co.jp/index.htm.

© 2013 Toshiba America Electronic Components, Inc. All rights reserved.

Information in this press release, including product pricing and specifications, content of services and contact information,  is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice.  Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

Editor's Note:  Images available for download from:
http://www.toshiba.com/taec/news/press_releases/2013/powr_13_676.jsp

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com

SOURCE  Toshiba America Electronic Components, Inc.

Toshiba America Electronic Components, Inc.

CONTACT: Rebecca Bueno, Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com

Web Site: http://www.toshiba.com/taec